The Improved Non-Polar Gas Sensing Performance of Surface-Modified Porous Silicon-Based Gas Sensors

The present article studied gas sensor sensing characteristics based on surface-modified porous silicon (PS) by depositing the metal oxide semiconductor layer. PS layer was prepared through electrochemical etching of crystalline in an HF-based solution. DC magnetron sputtering technology used to obtain p-CuO surface p-PS. obtained material’s structural, morphological, and behavior were investigated using SEM, XRD, Raman spectra, current–voltage characteristics. For detection toluene chloroform vapors, a planar structure used. response value revealed that CuO/PS-based sensors have good sensitivity for vapors. mechanism is explained schematic energy band diagrams. Therefore, this approach helpful development simple, cost-effective detecting non-polar chemical analytes.